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采用激光扫描微区光电化学显微技术(PEM)对不同浓度下的苯并三氮唑(BTA)及其衍生物4-羧基苯并三唑甲酯与5-羧基苯并三唑甲酯的混合物(CBTME)在硼砂缓冲溶液(pH9.2)中对铜电极的缓蚀作用作了比较研究.研究发现当电位正向扫描至某一电位时,一定浓度的BTA或CBTME作用下,铜电极光响应由P-型转化为n-型,并可依此判断缓蚀剂的缓蚀性能,n-型光响应越大,缓蚀剂的缓蚀性能越好,与循环伏安光电流及交流阻抗测试的结果相一致;实验还发现,影响缓蚀剂对铜作用的过程不仅与缓蚀剂本身有关,还与电极电位有关.在一定的电位与一定的缓蚀剂浓度下可观察到铜电极表面共存着p-型和n-型区域及p转n的过程,因此可从微观上观察到缓蚀剂与铜表面作用的过程,为缓蚀剂的应用建立了良好的理论基础.
The effects of different concentrations of benzotriazole (BTA) and its derivatives, 4-carboxybenzotriazole methyl ester and 5-carboxybenzotriazole methyl ester, were investigated by laser scanning micro-area photoelectrochemical microscopy (PEM) The corrosion inhibition effect of the mixture (CBTME) on the copper electrode in a borax buffer solution (pH 9.2) was studied.It was found that when the potential was positively scanned to a certain potential, a certain concentration of BTA or CBTME under the action of the copper electrode The photoresponse changes from P-type to n-type, and the corrosion inhibition performance of the inhibitor can be judged accordingly. The larger the n-type light response is, the better the corrosion inhibition performance of the corrosion inhibitor is. Compared with the cyclic voltammetric photocurrent and AC impedance test results are consistent; experiments also found that the impact of corrosion inhibitor on the copper process is not only related to the corrosion inhibitor itself, but also with the electrode potential in a certain potential and a certain concentration of corrosion inhibitor can be observed Copper electrode surface coexistence of p-type and n-type region and p turn n process, so from the microscopic view of the corrosion inhibitor and the copper surface of the process for the application of corrosion inhibitors to establish a good theoretical basis.