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研究了碲镉汞MOS积垒层的二维电子气特性。在垂直磁场下研究了积垒层的磁阻振荡效应。实验表明在磁场大于0.5T时即可观察到明显的自旋分裂现象。在碲镉汞MOS界面的窄势阱中存在着多个子能级(电子在x、y方向的运动是自由的,而在z方向则只能占据分立的能级,即所谓的子能级)。在这些子能级中电子的密度随栅电压的变化而变化。碲镉汞材料由于具有小能隙、小的电子有效质量和大的g因子而有其特
The two-dimensional electron gas properties of the cadmium telluride-mercury MOS accumulation layer were studied. In the vertical magnetic field, the effect of the magnetoresistive oscillation of the barrier layer is studied. Experiments show that when the magnetic field is greater than 0.5T can be observed when the apparent spin splitting phenomenon. There are several sub-levels in the narrow potential well of the HgCdTeMOS interface (the electrons are free to move in the x and y directions and only occupy discrete energy levels in the z direction, the so-called sub-level) . The density of electrons in these sub-levels varies with the gate voltage. HgCdTe materials have their own characteristics due to their small energy gap, small electron effective mass, and large g-factor