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Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment.In this paper,an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed.To accurately describe the thermal effects,a modified nonlinear thermal sub-circuit which is related not only to power dissipation,but also ambient temperature is used to calculate the variations of channel temperature of the device;the temperature-dependent parasitic and intrinsic elements are also taken into account in this model.The parameters of the thermal sub-circuit are extracted by using the numerical finite element method.The results show that better performance can be achieved by using the proposed large signal model in the range of—55 to 125 ℃ compared with the conventional model with a linear thermal sub-circuit.
Accurate modeling of the electrothermal effects of GaN electronic devices is critical for reliability design and assessment. In this paper, an improved temperature-dependent model for large signal equivalent circuit modeling of GaN HEMTs is proposed. To accurately describe the thermal effects, a modified nonlinear thermal sub-circuit which is related not only to power dissipation, but also ambient temperature is used to calculate the variations of channel temperature of the device; the temperature-dependent parasitic and intrinsic elements are also taken into account in this model. The parameters of the thermal sub-circuit are extracted by using the numerical finite element method. results show that better performance can be achieved by using the proposed large signal model in the range of -55 to 125 ° C compared with the conventional model with a linear thermal sub -circuit.