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鎢上滲硅层在1500—1700℃范圍內有效地防止鎢的氧化.滲层主要是WSi_2相.高溫氧化时,滲层表面形成玻璃体,WSi_2与W扩散反应形成貧硅的W_3Si_2相.氧化时間增加,W_3Si_2层厚度增加.
The silicon layer on the tungsten layer effectively prevents the oxidation of tungsten in the range of 1500-1700 ° C. The diffusion layer is mainly composed of WSi_2 phase.When the glass substrate is formed by high temperature oxidation, the diffusion layer of WSi_2 and W form the silicon-depleted W_3Si_2 phase. Between the increase, W_3Si_2 layer thickness increases.