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The behavior of Ti based on Si(111) in oxygen under high temperatures(700 ℃, 800 ℃, 900 ℃, 1 000 ℃ and 1 100 ℃) is reported. X-ray diffraction(XRD) and Fourier transform infrared spectroscopy(FTIR) are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.
The behavior of Ti based on Si (111) at oxygen under high temperatures (700 ° C, 800 ° C, 900 ° C, 1000 ° C and 100 ° C) is reported. X-ray diffraction and Fourier transform infrared spectroscopy ) are used to analyze the structure and composition of the samples annealing at different temperatures in oxygen ambience. It is found that raising temperature is helpful to the formation of both TiSi2 and TiO2 and helpful to the diffusion of Ti to Si substrate.