论文部分内容阅读
本文设计并制备了结构为 ITO/Zn O/NSPA/Si/Al 的纳米异质结发光二极管，实现了近白光电致发光。首先，利用蒸汽刻蚀技术，在 P-Si 表面制备纳米多孔硅柱状阵列（NSPA）层，然后对 NSPA 表面进行氧等离子体钝化处理，通过优化钝化参数改善了硅基 NSPA 的发光特性；最后，在 NSPA 表面生长 N 型 Zn O 薄膜，得到 Zn O/NSPA 纳米异质结发光二极管。实验结果表明，氧等离子钝化处理能够有效地提高该器件的发光强度,并实现近白光发射。该结构近白光器件的实现为硅基 Zn O 固态照明及硅基光电子集成电路的开发提供重要研究依据。
In this paper, a nano-heterostructure LED with ITO / Zn O / NSPA / Si / Al structure has been designed and prepared to achieve near-white electroluminescence. Firstly, nano-porous silicon columnar array (NSPA) was deposited on the surface of P-Si by steam etching, and then oxygen plasma passivation was performed on the surface of NSPA. The luminescent properties of silicon-based NSPA were improved by optimizing passivation parameters. Finally, an N-type Zn O thin film was grown on the surface of NSPA to obtain a Zn O / NSPA nano-hetero-luminescent diode. The experimental results show that oxygen plasma passivation can effectively improve the device’s luminous intensity and achieve nearly white light emission. The realization of near white light device of this structure provides an important research basis for the development of silicon-based Zn O solid state lighting and silicon-based optoelectronic integrated circuits.