论文部分内容阅读
用聚偏氟乙烯－三氯乙烯［Ｐ（ ＶＤＦ－ＴｒＦＥ）］薄膜作 １６ Ｘ１集成热释电线性阵列的敏感膜，经退火和７５ ｋＶ／ｍｍ场强极化后测得其相对介电常数为 １２. ６，介电损耗约 ０． ０１。为了降低热导和热容，提高探测器的探测灵敏度，用ＫＯＨ作化学腐蚀完全去除了线性阵列下方的硅衬底，形成悬空结构。用锁相放大器测定了该集成热释电线性阵列的电压灵敏度、电流灵敏度和噪声。实测得到最大电压灵敏度为１０７ Ｖ／Ｗ，最大探测率约５×１０~6ｃｍＨｚ~1/2／Ｗ。
A sensitive film of 16 × 1 integrated pyroelectric linear array was fabricated with polyvinylidene fluoride-trichlorethylene [P (VDF-TrFE)] thin film. After annealing and polarization at 75 kV / mm, the relative permittivity Is 12.6, the dielectric loss is about zero. 01. In order to reduce the thermal conductivity and heat capacity, and improve the detection sensitivity of the detector, chemical etching with KOH completely removes the silicon substrate under the linear array to form a floating structure. The voltage sensitivity, current sensitivity, and noise of the integrated pyroelectric linear array were measured with a lock-in amplifier. Measured maximum voltage sensitivity of 107 V / W, the maximum detection rate of about 5 × 10 ~ 6cmHz ~ 1/2 / W.