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分析了实际光学薄膜与其块状材料在微观结构及宏观尺寸上的差异 ,指出了单光子吸收电离与雪崩倍增可分为两个相对独立的先后过程处理 ,提出了实际光学薄膜激光诱导损伤的单光子吸收电离引发电子雪崩模型。讨论了原初电子数密度与入射激光波长的关系 ,以及实际光学薄膜激光诱导损伤阈值与其原初电子数密度的关系 ,提出了确定原初电子数密度的实验方法
The difference between microscopic structure and macroscopic size of the actual optical thin film and its bulk material is analyzed. It is pointed out that the single photon absorption ionization and the avalanche multiplication can be divided into two relatively independent sequential processes, and the actual optical thin film laser induced damage single Photon absorption ionization triggers the electronic avalanche model. The relationship between the initial electron density and the incident laser wavelength and the relationship between the laser induced damage threshold and the original electron density of the optical film were discussed. The experimental method of determining the initial electron number density