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GaAlAs隐埋异质结激光器已经和双极晶体管实现单片集成。异质结晶体管是通过激光器的掩埋层进行再生长形成的。激光器阈值电流的典型值为30mA,所获得的光电晶体管共发射极的电流增益范围为100—400。集电极电流15mA时,光电晶体管的光响应度为75A/W(响应波长为0.82μm)。
GaAlAs buried heterostructure lasers have been monolithically integrated with bipolar transistors. Heterojunction transistors are formed by regrowth of the buried layer of the laser. The laser threshold current is typically 30mA and the resulting phototransistor common emitter current gain range is 100-400. The phototransistor has a photoresponse of 75 A / W (response wavelength of 0.82 μm) at a collector current of 15 mA.