Exploring the emergence and maintenance of cooperation in social dilemma is valuable and it arises considerable concs of many researchers.In this paper,we propo
A tunnel field-effect transistor (TFET) is proposed by combining various advantages together,such as non-uniform gate-oxide layer,hetero-gate-dielectric (HGD),a
Neutron radiation experiments of optocouplers at back-streaming white neutrons (back-n) in China Spallation Neutron Source (CSNS) are presented. The displacemen
Dual-active-layer (DAL) amorphous InGaZnO (IGZO) thin-film transistors (TFTs) are fabricated at low temperature without post-annealing.A bottom low-resistance (
We present a systematic investigation of the depolarization properties of a supercontinuum accompanied with fem-tosecond laser filamentation in barium fluoride
The effects of gate oxide traps on gate leakage current and device performance of metal-oxide-nitride-oxide-silicon (MONOS)-structured NAND flash memory are inv