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利用多物理场耦合模拟软件研究了3英寸(1英寸=2.54 cm)碳化硅(Si C)单晶生长中感应线圈位置对单晶生长系统温度场的影响。分析了感应线圈位置变化对晶体表面径向温度、晶体内部轴向温度以及晶体生长界面形状的影响。同时分析了不同生长时期晶体的界面形状和各向温差的变化规律,建立了3英寸Si C单晶生长界面形状计算机模型,进而将计算机模拟得到的晶体界面形状与单晶生长对照实验获得晶体的界面形状相对比,验证了该模型的可靠性。以此为依据,优化了单晶生长工艺参数,获得了理想的适合3英寸Si C单晶生长的温度场,并成功获得了高质量的3英寸Si C单晶。
The effect of the induction coil position on the temperature field of single crystal growth system was studied by using multi-physics coupled simulation software in a 3 inch (1 inch = 2.54 cm) silicon carbide (SiC) single crystal growth. The influence of the position change of the induction coil on the radial temperature of the crystal surface, the internal axial temperature of the crystal and the shape of the crystal growth interface was analyzed. At the same time, the changes of interface shape and temperature difference in different growth stages were analyzed. A 3-inch Si C single crystal growth interface shape computer model was established, and then the computer simulation of the crystal interface shape and single crystal growth control experiment obtained crystal The contrast of interface shape verifies the reliability of the model. Based on this, the single crystal growth process parameters were optimized and the ideal temperature field suitable for the growth of 3-inch Si C single crystal was obtained, and the high-quality 3-inch Si C single crystal was successfully obtained.