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为提高绝缘栅门极晶体管(insulated gate bipolar transistor,IGBT)模块运行的可靠性,研究了缺陷对IGBT模块内部寄生参数的影响,提出了一种基于频率响应的IGBT模块内部缺陷诊断方法,并对其工作原理和性能特点进行了详细分析。该方法基于IGBT模块失效过程中电或热老化导致的内部寄生参数变化,即在IGBT模块集射极开路状态下,通过在门极与发射极之间施加扫频激励信号,获取不同运行阶段集射极响应频谱的变化,由此判断IGBT模块内部是否存在缺陷。实验研究结果证实,所提出的方法可以有效辨识IGBT模块内部硅片失效缺陷,能够为及时替换赢得时间,从而避免模块的完全失效及由此造成的装置损坏,与现有的故障诊断方法相比,其响应时间更充裕。
In order to improve the reliability of the insulated gate bipolar transistor (IGBT) module operation, the influence of the defect on the internal parasitic parameter of the IGBT module is studied, and a method for the internal defect diagnosis of the IGBT module based on the frequency response is proposed. Its working principle and performance characteristics were analyzed in detail. The method is based on the change of internal parasitic parameters caused by electrical or thermal aging in the IGBT module failure process. That is, under the condition that the emitter of the IGBT module is in the open collector state, a sweep set excitation signal is applied between the gate and the emitter to obtain different operating phase sets Emitter response to changes in the spectrum, which determines the IGBT module within the existence of defects. The experimental results show that the proposed method can effectively identify the silicon wafer failure in the IGBT module, and can replace the winning time in time to avoid the complete failure of the module and the device damage caused by it. Compared with the existing fault diagnosis methods , Its response time is more abundant.