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美国加州大学圣地亚哥分校的一个研究团队开发出一款基于纳米结构的、不依赖半导体传导的光控微电子器件,在低电压和低功率激光激发的条件下可将电导率比现有半导体器件提高近10倍。这一成果发表在2016年11月4日的《自然·通讯》杂志上。传统的半导体器件受到材料本身的限制,在频率、功耗等方面存在极限,而利用自由电子替代半导体材料通常需要高电压、大功率激光或高温激发。该团队在硅片上用金加工出一种类似蘑菇形状的纳米结构(称为“超材料”结构),在10伏以下的直流电压和低功率红外激光激发下,即可释放自由电子,从而极大地提高器件的电导
A research team at the University of California, San Diego, USA, developed a nanostructured light-control microelectronic device that does not rely on semiconductor conduction and can increase conductivity over existing semiconductor devices under low-voltage and low-power laser excitation Nearly 10 times. This result was published in the November 4, 2016 issue of the journal Nature / Communications. Conventional semiconductor devices are limited by the materials themselves and have limitations in terms of frequency and power consumption. The use of free electrons to replace semiconductor materials usually requires high-voltage, high-power laser or high-temperature excitation. The team fabricated a mushroom-like nanostructure (called the “metamaterial” structure) on a silicon wafer that releases free electrons when excited by a DC voltage of 10 V or less and a low-power infrared laser , Thus greatly improving the conductance of the device