Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low

• 作 者: 邓宏 B.GONG A.J.Petrella J.J.Russell R.N.Lamb
• 机 构: School of Microelectronics and Solid State Electronics, University of Electronic Scienceand Technolo
• 出 处: Science in China(Series E:Technological Sciences)
• 发表日期: 2003年04期
• 关键词: sputtering vacuum hydroxide crystallite nucleation photoelectron preferred pulse

A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions with the precursor of zinc carbamate Zn4O(CO2Net2)6. SEM, AFM and XRD studies show that the resultant thin films have high density, smooth surface, uniform polycrystalline structure and excellent c-axis orientation. XPS investigation indicates that the ZnO films are free of decomposed precursor residues in the bulk. Careful quantitative XPS analysis reveals that the ZnO films are stoichiometric with O/Zn atomic ratio very close to that of ZnO single crystal.

A novel technique is developed for growing high quality ZnO thin films by means of single source chemical vapor deposition (SS CVD) under low vacuum conditions with the precursor of zinc carbamate Zn4O (CO2Net2) 6. SEM, AFM and XRD studies show that the resultant Thin films have high density, smooth surface, uniform polycrystalline structure and excellent c-axis orientation. XPS investigation indicates that the ZnO films are free of decomposed precursor residues in the bulk. Careful quantitative XPS analysis reveals that the ZnO films are stoichiometric with O / Zn atomic ratio very close to that of ZnO single crystal.