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电子回旋共振(ECR)等离子体法广泛用于SiO_2、Si_3N_4膜等的低温CVD技术,以及MOS器件的微细栅极刻蚀技术。在ECR等离子体法中,由于低气压下生成高离子化的等离子体,故以低能量、大的离子电流照射而能持续进行表面反应,然而以往的技术无法实现高质量的薄膜工艺。由于用固体靶溅射,靶材供给容易,进而把上述技术作为基础,开发了ECR溅射技术。
Electron cyclotron resonance (ECR) plasma method is widely used in low temperature CVD technology such as SiO_2, Si_3N_4 film, and the micro-gate etching technology of MOS devices. In the ECR plasma method, since high ionized plasma is generated at a low pressure, surface reaction can be continuously performed by irradiation with low energy and large ion current. However, the conventional technique can not realize a high-quality thin film process. ECR sputtering technology has been developed because of the sputtering of the solid target and the easy supply of the target material, and further based on the above-described technique.