,Numerical study of strained InGaAs quantum well lasers emitting at 2.33 μm using the eight-band mod

• 机 构: Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors,Chinese Academy of Sc
• 出 处: 中国物理B(英文版)
• 发表日期: 2011年7期
• 关键词: band structure eight-band k.p theory strained quantum well peak emission wavelen

We investigate the band structure of a compressively strained In(Ga)As/In 0.53 Ga 0.47 As quantum well (QW) on an InP substrate using the eight-band k · p theory.Aiming at the emission wavelength around 2.33 μm,we discuss the influences of temperature,strain and well width on the band structure and on the emission wavelength of the QW.The wavelength increases with the increase of temperature,strain and well width.Furthermore,we design an InAs /In 0.53 Ga 0.47 As QW with a well width of 4.1 nm emitting at 2....","We investigate the band structure of a compressively strained In(Ga)As/In0.53Ga0.47As quantum well (QW) on an InP substrate using the eight-band k·p theory.Aiming at the emission wavelength around 2.33 μm,we discuss the influences of temperature,strain and well width on the band structure and on the emission wavelength of the QW.The wavelength increases with the increase of temperature,strain and well width.Furthermore,we design an InAs /In0.s3Ga0.47As QW with a well width of 4.1 nm emitting at 2.33 μm by optimizing the strain and the well width.