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To obtain high transmittance and low resistivity ZnO transparent conductive thin films,a series of ZnO ceramic targets(ZnO:Al,ZnO:(Al,Dy),ZnO:(Al,Gd),ZnO:(Al,Zr),ZnO:(Al,Nb),and ZnO:(Al,W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency(RF) magnetron sputtering.X-ray diffraction(XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the(002) plane.The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10-3 Ω·cm was obtained.
To obtain high transmittance and low resistivity ZnO transparent conductive thin films, a series of ZnO ceramic targets (ZnO: Al, ZnO: Al, Dy: ZnO: Al, Gd) (Al, Nb), and ZnO: (Al, W)) were fabricated and used to deposit thin films onto glass substrates by radio frequency (RF) magnetron sputtering. X- ray diffraction (XRD) analysis shows that the films are polycrystalline fitting well with hexagonal wurtzite structure and have a preferred orientation of the (002) plane. The transmittance of above 86% as well as the lowest resistivity of 8.43 × 10-3 Ω · cm was obtained.