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利用金属有机化学气相沉积方法在玻璃衬底上生长了掺磷的p型ZnO薄膜.实验采用二乙基锌作为锌源,高纯氧气和五氧化二磷粉末分别作为氧源及磷掺杂源.实验表明生长温度为400～450℃时获得了p型ZnO薄膜,而且在420℃时,其电学性能最好,空穴浓度为1.61×1018cm-3,电阻率为4.64Ω.cm,迁移率为0.838cm2/(V.s).霍尔测试和低温光致发光谱证实了该ZnO薄膜的p型导电特性,并观察到薄膜位于3.354eV与中性受主束缚激子相关的发射峰.
Phosphorus-doped p-type ZnO thin films were grown on glass substrates by metal-organic chemical vapor deposition method. Diethyl zinc was used as the zinc source, high purity oxygen and phosphorus pentoxide powders were used as oxygen source and phosphorus doping source The experiments show that the p-type ZnO thin films are obtained at the growth temperature of 400-450 ℃, and the best electrical properties are obtained at 420 ℃, the hole concentration is 1.61 × 1018cm-3, the resistivity is 4.64Ω.cm, the mobility Was 0.838cm2 / (Vs). Hall test and low temperature photoluminescence confirmed the p-type conductivity of the ZnO thin film and observed the emission peak of the film at 3.354eV with neutral acceptor bound excitons.