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Unintentionally doped GaN films grown by MOCVD were irradiated with neutrons at room temperature. In order to investigate the influence of neutron irradiation on the optical properties of GaN films, persistent photoconductivity(PPC) and low temperature photoluminescence(PL) measurements were carried out. Pronounced PPC was observed in the samples before and after neutron irradiation without the appearance of a yellow luminescence(YL) band in the PL spectrum, suggesting that the origin of PPC and YL are not related. Moreover, PPC phenomenon was enhanced by neutron irradiation and quenched by the followed annealing process at 900 C. The possible origin of PPC is discussed.
In order to investigate the influence of neutron irradiation on the optical properties of GaN films, persistent photoconductivity (PPC) and low temperature photoluminescence (PL) measurements were carried out. The Indent to doped GaN films grown by MOCVD were irradiated with neutrons at room temperature. PPC was observed in the samples before and after neutron irradiation without the appearance of a yellow luminescence (YL) band in the PL spectrum, suggesting that the origin of PPC and YL are not related. Moreover, PPC phenomenon was enhanced by neutron irradiation and quenched by the following annealing process at 900 C. The possible origin of PPC is discussed.