【摘 要】
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The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Ar using the plasma-enhanced chemical vapourdeposition method is reported. The chemical bonding s
【机 构】
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Department of Electronic Engineering, Fudan University, Shanghai 200433, China“,”Taiwan Semiconducto
论文部分内容阅读
The preparation of a-SiOCF films from Si(OC2H5)4, C4F8 and/or Ar using the plasma-enhanced chemical vapourdeposition method is reported. The chemical bonding structures of the films are analysed by x-ray photoelectronspectroscopy (XPS). In the case of the films deposited from the mixture with and without Ar, the configurations ofF-Si-O-Si, Si-OH, Si-O-Si, C-CF and C-F are contained. However, there is also the C-C configuration in the filmprepared from the mixture with Ar. Moreover, it is found that the photoelectron peaks of Si 2p, O ls and F ls for thefilm deposited from the feeding gas with Ar show the same shift of about leV toward high binding energy in comparisonwith those for the film prepared from the feeding gas without Ar. No evidence reveals the presence of an Si-C bond inthe films.
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