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设计了一种低压、低功耗基准电压源电路.该电路采用工作在亚阈区的MOSFET与传统PNP晶体管相结合的方式,使得电路的输出基准电压与MOSFET阈值无关,具有较低功耗和较高精度.同时,虚拟二极管连接的偏置结构的引入提高了环路增益,进而提高基准源的电源抑制比(PSRR).采用SMIC 0.18μm工艺平台,并完成版图设计以及仿真验证.当基准源输出电压为0.702V时,电源电压工作范围为0.9~3.0V,静态功耗仅为0.6μW,其温度系数为13.6μV/℃,PSRR接近80dB.在不同工艺角下,该基准电路的输出基准电压最大偏差为9mV.
A low-voltage, low-power reference voltage source circuit is designed.The circuit combines the MOSFET operating in the subthreshold region with the traditional PNP transistor to make the output voltage of the circuit irrelevant to the MOSFET threshold with lower power consumption and High accuracy.At the same time, the introduction of the bias structure of the virtual diode connection improves the loop gain, thereby increasing the power supply rejection ratio (PSRR) of the reference.Using the SMIC 0.18μm process platform and complete the layout design and simulation verification.When the benchmark When the source output voltage is 0.702V, the supply voltage operates from 0.9V to 3.0V, the quiescent power dissipation is only 0.6μW, the temperature coefficient is 13.6μV / ° C, and the PSRR is close to 80dB. The output of the reference circuit The maximum deviation of the reference voltage is 9mV.