论文部分内容阅读
我们在研制VMOS器件中应用硅各向异性腐蚀技术,并取得成功(VMOS器件主要电参数为:BV_(DS)=50～60V,I_(DS)=1～2A)。本文着重介绍硅各向异性腐蚀基本原理和各向异性腐蚀液、氢氧化钾-异丙醇-水腐蚀液的机理、V形槽腐蚀技术和实验结果分析。
We have successfully developed the anisotropic silicon anisotropy technology in the development of VMOS devices. The main electrical parameters of VMOS devices are BV_ (DS) = 50 ~ 60V, I_ (DS) = 1 ~ 2A). This paper focuses on the basic principles of anisotropic anisotropic etching and anisotropic etching solution, potassium hydroxide - isopropanol - water corrosion mechanism, V-groove corrosion technology and experimental results.