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硅烷外延具有生长温度低、生长过程中无可逆反应、自掺杂程度轻等许多优点,获得了广泛应用。但由于硅烷气体的气相成核作用,外延生长速度缓慢。在典型的生长条件下,如1050℃、载气线速度7cm/s、硅烷分压0.35×10~(-2),生长速率仅为0.4μm/min。而四氯化硅外延,在相当于同样的工艺条件下,生长速率可达1μm/min。这样,从效率和成本来看,硅烷外延不如四氯化硅外延合算。因此,如何抑制硅烷气体的气相成核作用,提高硅烷外延的生长速率,乃是国内目前硅烷外延研究的方向。
Silane epitaxy has many advantages, such as low growth temperature, no reversible reaction during growth and light self-doping, which have been widely used. However, due to the gas phase nucleation of silane gas, epitaxial growth slow. Under typical growth conditions, such as 1050 ℃, carrier gas linear velocity 7cm / s, silane partial pressure 0.35 × 10 -2, the growth rate is only 0.4μm / min. The silicon tetrachloride epitaxial, equivalent to the same process conditions, the growth rate of up to 1μm / min. In this way, from the efficiency and cost point of view, silane epitaxy as silicon tetrachloride epitaxial cost-effective. Therefore, how to suppress the gas phase nucleation of silane gas and increase the growth rate of silane epitaxy is the direction of the current research on silane epitaxy in China.