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采用铝阳极氧化技术,制作了含有阵列型铝通柱的10.16 cm(4英寸)直径封装基板。由金相显微镜观察:基板的厚度在300μm左右,铝通柱的表面直径约158μm,内部最大直径约473μm。分析结果表明:图形掩膜边缘存在侧向阳极氧化效应,因而造成铝通柱实际为纺锤体结构。由半导体网络分析仪测得铝通柱和铝栅格地之间的绝缘电阻达到1011Ω;通过矢量网络分析仪反推出基板介质在1 MHz下的相对介电常数为5.97。这种三维铝封装基板制作工艺简单、成本低廉,可用于系统级封装领域。
A 10.16 cm (4 inch) diameter package substrate with arrayed aluminum via posts was fabricated using aluminum anodization. Observed by a metallographic microscope: the thickness of the substrate is about 300 μm, the surface diameter of the aluminum through-hole is about 158 μm, and the maximum internal diameter is about 473 μm. The analysis results show that there is a lateral anodic oxidation on the edge of the pattern mask, which results in an actual spindle structure of the aluminum post. By the semiconductor network analyzer measured aluminum through the grid and the aluminum grid between the insulation resistance reached 1011Ω; vector network analyzer anti-derived substrate dielectric at 1 MHz relative permittivity of 5.97. This three-dimensional aluminum package substrate manufacturing process is simple, low-cost, can be used for system-in-package area.