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本文报道了以Ｉ２作输运剂，用化学气相沉积法生长ＺｎＳｅ单晶的实验结果，其生长条件为升华温度８５０～９００℃，生长管内温差１５～２０℃，温度梯度小于２℃／ｃｍ，并采用了特殊形状的生长管来控制原料的输运及生长速度。经过３０天左右的生长，得到了长３０ｍｍ，直径１５ｍｍ的桔黄色ＺｎＳｅ单晶。观察了晶体的表观形态和生长习性，并用Ｘ射线衍射技术测定了晶格常数为０．５６６７６ｎｍ，双晶衍射半峰宽为１７ｓ。用光学显微镜观察了晶体缺陷，腐蚀坑密度为（４～６）×１０４／ｃｍ２。对单晶的完整性和均匀性做了测试，并对晶体中的杂质进行了分析。实验结果表明，这种生长技术可以用来生长基底质量ＺｎＳｅ单晶。
In this paper, we report the experimental results of ZnSe single crystal grown by chemical vapor deposition with I2 as transport agent. The growth conditions are as follows: the sublimation temperature is 850-900 ℃, the temperature difference is 15-20 ℃, the temperature gradient is less than 2 ℃ / cm, And the use of a special shape of the growth tube to control the transport of raw materials and growth rate. After about 30 days of growth, an orange ZnSe single crystal with a length of 30 mm and a diameter of 15 mm was obtained. The morphology and growth habit of the crystal were observed. The lattice constant was 0.56676nm and the half width of the double crystal diffraction was 17s by X-ray diffraction. The crystal defects were observed by optical microscope. The density of corrosion pits was (4 ~ 6) × 104 / cm2. The integrity and uniformity of the single crystal were tested and the impurities in the crystal were analyzed. Experimental results show that this growth technique can be used to grow substrate-quality ZnSe single crystals.