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采用高氢稀硅烷热丝化学气相沉积方法制备氢化微晶硅薄膜．其结构特征用Ｒａｍａｎ谱，红外透射谱，小角Ｘ射线散射等来表征．结果表明微晶硅的大小及在薄膜中的晶态比χｃ随氢稀释度的提高而增加．而从红外谱计算得到氢含量则随氢稀释度的增加而减少．小角Ｘ射线散射结果表明薄膜致密度随氢稀释度的增加而增加．结合红外谱和小角Ｘ射线散射的结果讨论与比较了不同相结构下硅网络中Ｈ的键合状态．认为随着晶化的发生和晶化程度的提高Ｈ逐渐移向晶粒表面，在硅薄膜中Ｈ的存在形式从以ＳｉＨ为主向ＳｉＨ２转变，即在微晶硅膜中主要以ＳｉＨ２形式存在于晶粒的界面．
Hydrogenated microcrystalline silicon thin films were prepared by high-hydrogen thin silane hot filament chemical vapor deposition. Its structural features are characterized by Raman spectroscopy, infrared transmission spectroscopy, small-angle X-ray scattering and the like. The results show that the size of microcrystalline silicon and crystalline ratio χc in the film increase with the increase of hydrogen dilution. The hydrogen content calculated from the infrared spectrum decreases with increasing hydrogen dilution. Small angle X-ray scattering results show that the film density increases with increasing hydrogen dilution. Combining the results of infrared spectrum and small-angle X-ray scattering, the bonding states of H in the silicon network under different phase structures were discussed and compared. It is considered that as the crystallization progresses and the degree of crystallization increases, H gradually moves toward the grain surface. In the silicon thin film, the existing form of H changes from mainly SiH to SiH2, that is, SiH2 mainly exists in the microcrystalline silicon film At the grain interface.