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在不同场强和照度下,测量了一系列夹心结构α-Si∶H膜的光电导响应曲线,发现在较弱场强下,上升曲线和下降曲线有反常现象。作者分析了光电导响应曲线,指出无论是上升曲线还是下降曲线,都可以分解为由两个变化过程组成:一个“尖形”和一个“类指数形”。通过对零场和极弱场强响应的研究,表明上述现象可用光照或停止光照后空间电荷分布的变化来解释。本文对具有低迁移率和高电阻率的光敏材料具有普遍的意义。
Under different field intensity and illuminance, the photoconductive response curves of α-Si: H films with a series of sandwich structures were measured and found that the ascending and descending curves were anomalous under the weak field strength. The author analyzed the photoconductivity response curve and pointed out that both the ascending curve and the descending curve can be decomposed into two changing processes: one “pointed” and one “quasi-exponential”. The study of response to zero field and very weak field strength shows that the above phenomena can be explained by the change of space charge distribution after illumination or stop lighting. This article has a general significance for photosensitive materials with low mobility and high resistivity.