Hot-carrier effects on irradiated deep submicron NMOSFET

• 作 者: 崔江维 郑齐文 余学峰 丛忠超 周航 郭旗 文林 魏莹 任迪远
• 机 构: Key Laboratory of Functional Materials and Devices Under Special Environments,Chinese Academy of Sci
• 出 处: Journal of Semiconductors
• 发表日期: 2014年07期
• 关键词: irradiated irradiation attributed exposure narrow transistor degrade drain trapp

We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFET with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel device. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.

We investigate how γ exposure impacts the hot-carrier degradation in deep submicron NMOSFETs with different technologies and device geometries for the first time. The results show that hot-carrier degradations on irradiated devices are greater than those without irradiation, especially for narrow channel devices. The reason is attributed to charge traps in STI, which then induce different electric field and impact ionization rates during hotcarrier stress.