Effect of Ba in KDP crystal on the wavelength dependence of laser-induced damage

• 作 者: 高慧 孙洵 许心光 刘宝安 徐明霞 赵显
• 机 构: State Key Laboratory,Crystal Materials of Shandong University,Department of Physics,Qilu Normal Univ
• 出 处: Chinese Optics Letters
• 发表日期: 2011年09期
• 关键词: impurity interstitial compensation potassium relaxed irradiation ferroelectric s

Ba impurity in potassium dihydrogen phosphate(KDP) is studied with the first-principle simulation method. The relaxed configurations and density of the states of KDP crystal with Ba impurity are calculated. We find that Ba can generate a K vacancy and an interstitial O-H unit for charge compensation. The band gap of KDP crystal narrowed down to about 3.9 eV,which is consistent with the experimental data from previously reported studies and indicates that Ba may be a source of low-damage threshold.

Baited in potassium dihydrogen phosphate (KDP) is studied with the first-principle simulation method. The relaxed configurations and density of the states of KDP crystal with Ba impurity are calculated a K vacancy and an interstitial OH unit for charge compensation. The band gap of KDP crystal narrowed down to about 3.9 eV, which is consistent with the experimental data from previously reported studies and indicates that Ba may be a source of low-damage threshold.