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报告了等离子化学气相沉积（PCVD）硬膜TiSiN中Si对膜的影响。沉积膜经过电子探针（EMPA）、扫描电镜（SEM）、X射线（XRD）和X光电子谱（XPS）分析。实验表明，在TiN的气相沉积中加入少量Si可以明显改善膜的结构和组成。
The effect of Si on the film in plasma-chemical vapor deposition (PCVD) ductile TiSiN was reported. The deposited films were analyzed by EMPA, SEM, XRD and XPS. Experiments show that adding a small amount of Si in the vapor deposition of TiN can obviously improve the structure and composition of the film.