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半导体超品格和量子阱结构形成了载流子的准二维体系,特别是正方向势阱压缩效应增强了电子-空穴间库仑相互作用,使得二维激子束缚能较三维激子束缚能增大,从而使二维激子跃迁强度和吸收强度迅速增加,使得激子效应在量子阱光跃迁过程中起着比三维体系更重
The semiconductor supergrity and quantum well structure form a quasi-two-dimensional system of carriers. In particular, the potential well compression effect in the positive direction enhances the electron-hole Coulomb interaction so that the two-dimensional exciton binding energy can be increased compared with the three-dimensional exciton binding So that the two-dimensional exciton transition intensity and absorption intensity increase rapidly, making the exciton effect in the quantum well light transition process plays a more important role than the three-dimensional system