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对于半导体基板来说,良好散热的金刚石可以认为是最理想的。它还具有其他物质所无法得到的硬度、化学稳定性等方面的优良特性。日本住友电气工业开发了在硅、铝、钼等材料表面上制作金刚石薄膜的技术,它是把甲烷和氢的混合气体在13.56兆赫的高频下等离子化,在700～900℃的温度合成金刚石。金刚石膜层是透明的、在电子显微镜下可以观察到是10～500A(埃)的微细粒子紧密的膜层。合成膜的硬度也和金刚石相同,只要在
For the semiconductor substrate, good heat dissipation of diamond can be considered the most ideal. It also has other properties of the hardness, chemical stability and other aspects of the excellent features. Japan’s Sumitomo Electric Industries has developed the production of silicon, aluminum, molybdenum and other materials on the surface of the diamond film technology, which is a mixture of methane and hydrogen gas plasma at 13.56 MHz high frequency, at a temperature of 700 ~ 900 ℃ synthesis of diamond . The diamond film is transparent and can be observed under an electron microscope as a fine-grained film of 10 to 500 A (Angstroms). Synthetic film hardness and the same diamond, as long as