SOD Stack Low-k Integration for 45nm Node and Beyond

• 作 者: K. Maekawa H. Nagai M. Iwashita M. Muramatsu K. Kubota K. Hinata A.Shiota T. Kokubo M. Hattori K. Mishima H. Nagano M. Kodera K. Tokushige
• 机 构: Tokyo Electron AT Ltd ,Tokyo Electron AT Ltd,Tokyo Electron AT Ltd,Tokyo Electron AT Ltd,Tokyo Elect
• 出 处: 电子工业专用设备
• 发表日期: 2005年03期

We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip process by using reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.

We investigated single damascene integration with Porous MSQ (Methyl-Silsesqui-oxane, k value is 2.3) and Spin on Low k MSQ (k value is 2.9) as hard mask on Porous MSQ. Mechanical property of Low k material is improved by Electron Beam (EB) Cure technology. And also One time cure of stacked Low k is successful without any problem. On integration issue of Low k material, we demonstrated low damage resist strip strip process by reducing gas chemistry and clarified mechanism of new Cu corrosion mode during CMP process.