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在200℃和680℃下对P型（100）单晶硅进行不同剂量的C+注入，实验表明680℃下注入形成的β-SiC埋层存在＜100＞取向生长的结晶态，经过1160℃氮气氛4小时或8小时退火后，结晶度得到进一步增强；200℃下注入形成的β-SiC埋层为无定形态，即使经过1160℃氮气氛4小时或8小时退火之后仍没有发现结晶态衍射峰存在．研究同时揭示了不同C+注入剂量对所形成β-SiC埋层结晶程度的影响，以及不同退火工艺对于样品制备的影响．通过AES成分深度测试及剖面透射电子显微镜（XTEM）可以直观分析β-SiC埋层的内在结构．
Different doses of C + were implanted into P-type (100) single-crystal silicon at 200 ℃ and 680 ℃. The results show that the embedded β-SiC layer formed at 680 ℃ exists in the <100> After 4 hours or 8 hours annealing, the crystallinity was further enhanced. The β-SiC embedded layer formed at 200 ℃ was in an amorphous state, and no crystallographic diffraction was found even after 4 hours or 8 hours annealing at 1160 ℃ in nitrogen atmosphere Peaks exist. The effect of different C + implantation doses on the degree of crystallinity of the β-SiC embedded layer formed and the effect of different annealing processes on sample preparation were also revealed. The intrinsic structure of β-SiC buried layer can be directly analyzed by AES component depth test and cross-section transmission electron microscope (XTEM).