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在温度范围900℃～1100℃、水蒸汽分压范围0.25大气压～0.95大气压下,评价了氮化硅膜的热氧化。用椭圆法测量了氧化速率,将其结果与同时氧化的硅衬底的结果相比较。生长的氧化物膜与消耗的氮化物膜之厚度比,即转换率为1.64,且其上下波动不大。发现氧化过的氮化物的厚度x_n与t~(2/3)成正比,这里t是氧化时间。这个关系与提出的氧化模型是一致的。品质因素m定义为氮化硅膜的掩蔽能力。发现膜在低温和高水蒸汽分压下氧化时所得到的m值较大。
The thermal oxidation of the silicon nitride film was evaluated at a temperature range of 900 ° C to 1100 ° C and a partial pressure of water vapor of 0.25 atm to 0.95 atm. The oxidation rate was measured by the ellipse method, and the result was compared with the results of the simultaneously oxidized silicon substrate. The thickness ratio of the grown oxide film to the consumed nitride film is 1.64, and the fluctuation thereof is small. The thickness of the oxidized nitride x_n is found to be proportional to t ~ (2/3), where t is the oxidation time. This relationship is consistent with the proposed oxidation model. The quality factor m is defined as the masking ability of the silicon nitride film. It was found that the m value obtained when the membrane oxidized under low temperature and high water vapor partial pressure was larger.