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提出一个用磁控溅射制备碳化硅薄膜的简化热力学模型。首先选出构成β－ C3N4,P－ C3N4 或 － (C2N2)n－的最可能表面反应 ,然后通过求解这个热力学模型计算了生长参量空间中不同类型 薄膜淀积区域的分界线。这些结果与一些实验结果很好地符合。
A simplified thermodynamic model for preparing silicon carbide thin films by magnetron sputtering is proposed. First, the most likely surface reactions that constitute β-C3N4, P-C3N4 or - (C2N2) n- are selected. Then, the boundary between different types of film deposition areas in the growth parameter space is calculated by solving this thermodynamic model. These results are in good agreement with some experimental results.