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本文从迁移率涉及的单晶理论的局限出发,对碱锑型光电阴极建立了类似于非晶半导体的能带结构模型。用MottDavis的电导理论首次成功地解释了这类光电阴极的的电导特性,并用晶界间悬挂键的补偿作用解释了Cs的体积作用这一困惑很久的问题。文中得出几种碱锑阴极非晶特性强弱(有序度)的结果是自洽性的。这种类非晶模型对长期以来碱锑型光电阴极的晶态理论作出了修正,对碱锑光电阴极的认识和发展具有重要的意义。
Based on the single crystal theory involved in the mobility, a band structure model similar to that of amorphous semiconductor has been established for the alkali-antimony photocathode. The conductance theory of Mott Davis has been successfully used for the first time to explain the conductance behavior of this type of photocathode and to explain the puzzling problem of the volumetric effect of Cs with the compensation effect of dangling bonds between the grain boundaries. The paper concludes that the results of several alkali-resistant antimony amorphous characteristics (order degree) are consistent. This kind of amorphous model has been amended for a long time alkali-antimony photocathode crystal theory, understanding and development of alkali antimony photocathode is of great significance.