Flat-band voltage shift in metal-gate/high-k/Si stacks

• 作 者: 黄安平 郑晓虎 肖志松 杨智超 王玫 朱剑豪 杨晓东
• 机 构: Department of Physics,Beihang University,Department of Physics and Materials Science,City University
• 出 处: Chinese Physics B
• 发表日期: 2011年09期
• 关键词: summarized dipole dielectric Fermi alleviate challenges annealing interlayer thi

In metal-gate/high-k stacks adopted by the 45 nm technology node,the flat-band voltage (V fb) shift remains one of the most critical challenges,particularly the flat-band voltage roll-off (V fb roll-off) phenomenon in p-channel metaloxide-semiconductor (pMOS) devices with an ultrathin oxide layer.In this paper,recent progress on the investigation of the V fb shift and the origin of the V fb roll-off in the metal-gate/high-k pMOS stacks are reviewed.Methods that can alleviate the V fb shift phenomenon are summarized and the future research trend is described.

The metal-gate / high-k stacks by the 45 nm technology node, the flat-band voltage (V fb) shift one of the most critical challenges, particularly the flat-band voltage roll-off ) phenomenon in p-channel metaloxide-semiconductor (pMOS) devices with an ultrathin oxide layer. In this paper, recent progress on the investigation of the V fb shift and the origin of the V fb roll-off in the metal-gate / high -k pMOS stacks are reviewed. Methods that can alleviate the V fb shift phenomenon are summarized and the future research trend is described.