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在高真空系统中 ,将 C70 膜淀积在 n-和 p- Ga As(10 0 )衬底上 ,制成 C70 / n- Ga As和 C70 / p- Ga As两种接触 ,并对它们的电学性质作了研究 .结果发现两种接触均为强整流结 ,在偏压为± 1V时 ,C70 / n- Ga As和 C70 / p- Ga As接触的整流比分别大于 10 6 和 10 4,并且它们的理想因子都接近于 1.当正向偏压固定时 ,它们的电流均是温度倒数的指数函数 ,从中确定两种异质结的有效势垒高度分别为 0 .784和 0 .5 31e V .用深能级瞬态谱 (DL TS)在 C70 / Ga As界面上观察到电子陷阱 E(0 .6 40 e V )和空穴陷阱 H3(0 .82 2 e V) ,以及用电容 -时间 (C- t)技术在固体 C70 中观测到两种空穴陷阱 H4(1.15 5 e V)和 H5 (0 .85 6 e V) .E(0 .6 40 e V)和 H3(0 .82 2 e V)的密度均小于 10 1 2 / cm2 ,可以得出结论 :固体 C70 对 Ga As表面具有很好的钝化作用
In a high vacuum system, a C70 film was deposited on n- and p-GaAs (100) substrates to make both C70 / n-GaAs and C70 / p-GaAs contacts and their The results show that the two kinds of contacts are all strong rectifying junctions. When the bias voltage is ± 1V, the commutation ratios of C70 / n-Ga As and C70 / p-Ga As are larger than 10 6 and 10 4, And their ideality factors are close to 1. When the forward bias is fixed, their current is an exponential function of the reciprocal temperature, from which to determine the effective barrier height of the two heterojunctions were 0.784 and 0.5 31e V. Electron traps E (0.66o eV) and hole traps H3 (0.82 2 eV) were observed at the C70 / GaAs interface with deep level transient spectroscopy (DL TS) Two hole traps H4 (1.15 5 eV) and H5 (0.856 eV) were observed for the solid C70 by capacitance-time (Ct) techniques. E (0.64 40 eV) and H3 0.82 2 e V) are all less than 10 1 2 / cm 2, it can be concluded that solid C70 has a good passivation effect on Ga As surface