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,Various Recipes of SiNx Passivated AlGaN/GaN High Electron Mobility Transistors in Correlation with
【机 构】
：
Key Laboratory of Wide Band Gap Semiconductor Material and Devices,Institute of Microelectronics,Xid
【出 处】
：
中国物理快报(英文版)
【发表日期】
：
2009年11期
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