,Low contact resistivity between Ni/Au and p-GaN through thin heavily Mg-doped p-GaN and p-InGaN com

• 作 者: 李晓静 赵德刚 江德生 陈平 朱建军 刘宗顺 乐伶聪 杨静 何晓光
• 出 处: 中国物理B（英文版）
• 发表日期: 2015年11期
• 关键词: Ohmic contact growth conditions compound contact layer tunneling

Thin heavily Mg-doped InGaN and GaN compound contact layer is used to form Ni/Au Ohmic contact to p-GaN. The growth conditions of the compound contact layer and its effect on the performance of Ni/Au Ohmic contact to p-GaN are investigated. It is confirmed that the specific contact resistivity can be lowered nearly two orders by optimizing the growth conditions of compound contact layer. When the fl ow rate ratio between Mg and Ga gas sources of p++-InGaN layer is 10.6%and the thickness of p++-InGaN layer is 3 nm, the lowest specific contact resistivity of 3.98×10?5?·cm2 is achieved. In addition, the experimental results indicate that the specific contact resistivity can be further lowered to 1.07×10?7?·cm2 by optimizing the alloying annealing temperature to 520?C.