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分步重复成象工艺中,一个重要的因素就是照明。本文提出了适用于此工艺的照明系统准则及其结构。新照明器——证明在设计上的成功——在10毫米×10毫米的面积上,可得到高均匀性的,超过300毫瓦/厘米~2的曝光能量,使得曝光时间缩短到足以直接在硅片上进行分步重复的程度。在硅片上对正性和负性光致抗蚀剂所分步出的图象作了讨论。由光学照相和扫描电子显微镜方法得到的数据证明:在分辨率、元件布局、光致抗蚀剂厚度和类型方面,对直接在硅片上曝光的光源来说,都具有潜在的好处。也对未经氮气清洗而曝光的负性光致抗蚀剂及驻波效应作了探讨。
An important factor in step-and-repeat imaging is lighting. This article presents the lighting system guidelines and their structures that apply to this process. New Luminaire - Proven in Design - High exposure uniformity of over 300 mW / cm 2 over a 10 mm x 10 mm area allows exposure times to be shortened enough to allow direct The degree of step-by-step repetition on the wafer. The image of the step-by-step patterning of positive and negative photoresists is discussed on silicon wafers. The data obtained by the optical and scanning electron microscopy methods demonstrate the potential benefits for light sources exposed directly on the wafer in terms of resolution, component layout, photoresist thickness and type. Negative photoresist exposed without nitrogen purge and standing wave effect were also discussed.