激光沉积硅薄膜的研究

• 作 者: 杨静然 王西坡 彭桂芳
• 机 构: 中国科学院长春应用化学研究所,中国科学院长春应用化学研究所,中国科学院长春应用化学研究所
• 出 处: 太阳能学报
• 发表日期: 1984年03期
• 关键词: 硅薄膜 激光诱导 基板材料 激光波长 激光沉积 自掺杂 任意选择 激光束聚焦 激光辐照 薄膜结构

近年来,许多国家都致力于用激光方法在铁、铝、玻璃、陶瓷、石墨等便宜基板材料上沉积硅薄膜,其优点是在沉积过程中可以任意选择空间,薄膜的生长能限制在基板一个小点上,这对太阳电池和微电子学是很有意义的。激光诱导沉积硅薄膜,还可以克服其他方法由于长时间加热带来的杂质迁移和来自基板的自掺杂缺点。 国外用于沉积硅薄膜的激光器很多,用得较多的有TEA CO_2激光器,连续CO_2激光器,倍频YAG激光器及氩离子激光器。

In recent years, many countries have devoted themselves to the laser deposition of silicon thin films on inexpensive substrate materials such as iron, aluminum, glass, ceramic, graphite, etc. The advantage is that space can be arbitrarily selected during the deposition process and the growth of the thin film can be limited to one On small dots, this makes sense for solar cells and microelectronics. Laser-induced deposition of thin films of silicon can also overcome other methods of impurity migration due to prolonged heating and self-doping defects from the substrate. Abroad for the deposition of silicon thin film laser many, with more TEA CO_2 laser, continuous CO_2 laser, frequency doubling YAG laser and argon ion laser.