论文部分内容阅读
用非稳态电子动力学并将电离系数取作为电子平均能量的函数的方法研究了GaAs MESFET中的沟道雪崩击穿。计算了在击穿时不同形状的高场畴和局部峰值电场,它们依赖于工艺参量、器件几何结构以及偏置条件。给出了一些设计规则,用它们可以获得最大的饱和输出功率以及可与接近夹断时的击穿电压值相比拟的满沟道电流击穿电压。特别是发现了挖槽的沟道几何结构以及增加栅漏距离将给出最好的器件性能,相应的掺杂浓度不高于1.2×10~(17)cm~(-3),而沟道电流I_(dss)在275～330mA/mm之间。
Channel avalanche breakdown in GaAs MESFETs was investigated using unsteady electron dynamics and taking the ionization coefficient as a function of the electron's average energy. Different shapes of high-field domains and local peak electric fields at breakdown are calculated, which depend on the process parameters, device geometries and bias conditions. Some design rules are given with which the maximum saturated output power can be obtained and the full-channel current breakdown voltage comparable to the breakdown voltage close to pinch-off. In particular, the trench geometries and the increased gate-drain distances are found to give the best device performance with corresponding doping concentrations of no more than 1.2 × 10 ~ (17) cm ~ (-3) Current I_ (dss) is between 275 ~ 330mA / mm.