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High quality,homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC(0001) Si planes in a vertical low-pressure hot-wall CVD system(LPCVD) by using trichlorosilane(TCS) as a silicon precursor source together with ethylene(C_2H_4) as a carbon precursor source.The growth rate of 25-30μm/h has been achieved at lower temperatures between 1500 and 1530℃.The surface roughness and crystalline quality of 50μm thick epitaxial layers(grown for 2 h) did not deteriorate compared with the corresponding results of thinner layers(grown for 30 min).The background doping concentration was reduced to 2.13×10~(15) cm~(-3).The effect of the C/Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.
High quality, homoepitaxial layers of 4H-SiC were grown on off-oriented 4H-SiC (0001) Si planes in a vertical low-pressure hot-wall CVD system (LPCVD) by using trichlorosilane (TCS) as a silicon precursor source together with ethylene (C 2 H 4) as a carbon precursor source. The growth rate of 25-30 μm / h has been achieved at lower temperatures between 1500 and 1530 ° C. The surface roughness and crystalline quality of 50 μm thick epitaxial layers (grown for 2 h) did not The background of the doping concentration was reduced to 2.13 × 10 ~ (15) cm ~ (-3). The effect of the C / Si ratio in the gas phase on growth rate and quality of the epi-layers was investigated.