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本文采用阳极氧化腐蚀技术对等离子ＣＶＤ方法制备的微晶硅薄膜进行了多孔化处理．在室温下用Ｎ２激光激发，在多孔化微晶硅薄膜上观测到了强的可见荧光，其荧光谱中包含１．９４ｅＶ和２．８６ｅＶ两个峰．我们还对其激发谱进行了研究，发现除与跃迁有关的吸收峰（３．４ｅＶ）外，在２—３ｅＶ间还有新的吸收峰．此结果与Ｆ．Ｂｕｄａ等人最近对硅量子线的理论计算相符合．
In this paper, anodic oxidation etching technology for plasma CVD microcrystalline silicon films prepared by porous processing. Excited by N2 laser at room temperature, a strong visible fluorescence was observed on the porous microcrystalline silicon film. The fluorescence spectrum contained two peaks of 1.94eV and 2.86eV. We also studied the excitation spectrum and found that in addition to the transition-related absorption peak (3.4eV), there are new absorption peaks between 2-3eV. This result and F. Buda et al. Recently fitted the theoretical calculations for silicon quantum wires.