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已计算了基片上热电薄膜的热电响应和D~*以及基片和薄膜厚度的函数关系。据发现在低频下应用时,热电层不应做得太薄,最好是几微米厚,而基片则越薄越好,其比热、密度和热导的乘积亦应尽可能地小。对于厚的基片,在中频区中其D~*值实际与频率无关。若热电层做得薄一些,则该中频区即扩展到较高频率,但在这一区域内D~*随薄膜厚度的减小而下降。
The thermoelectric response of the thermoelectric film on the substrate as a function of D ~ * and the substrate and film thickness has been calculated. It has been found that when applied at low frequencies, the thermoelectric layer should not be made too thin, preferably a few microns thick, while the thinner the substrate is, the product of specific heat, density and thermal conductance should be as small as possible. For thick substrates, their D ~ * values are virtually frequency-independent in the mid-frequency region. If the thermoelectric layer is made thinner, the IF region expands to a higher frequency, but D ~ * decreases with decreasing film thickness in this region.