论文部分内容阅读
据有关资料报道 ,日本松下电器工业公司与松下电子工业公司和美国的Ｖｅｎｔｕｒｅ企业ＨａｌｏＬＳＩ公司共同协作成功地开发出了比原来型快闪存储器高出 5 0倍的世界上最高速度、最小电压驱动的新型快闪 /ＥＥＰＲＯＭ存储器单元 (冲击式晶体管 )。由于快闪存储器 /ＥＥＰＲ
According to the data, Matsushita Electric Industrial Co., Ltd. and Matsushita Electric Industrial Co., Ltd. and the United States Venture Corporation HaloLSI companies work together to successfully develop than the original flash memory 50 times higher than the world’s highest speed, the minimum voltage-driven New Flash / EEPROM Memory Cell (Impulse Transistor). Due to flash memory / EEPR