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现在,微波晶体管,硅双极晶体管已开始广泛地用来做4千兆赫下低噪声和功率等各种放大器。由于晶体管放大器和其他结构的放大器相比,具有许多优良的性质,可望研制在更高频率下具有低噪声,高增益、高输出功率等特性的晶体管。然而,硅双极晶体管的特性目前已大致接近其极限,作为其代替者,GaAs肖特基势垒场效应晶体管(GaAsSBEET或GaAsMESFET)近年来引起人们极大的注意。自Mead(1966)提出了GaAsFET,Hooper(1967)等人确定了其作为微波晶体管的可能性,到Drangeid(1970)等人试制了最高振荡频率为30千兆赫的器件,这段时间为该器件作为微波晶体管的试制期。到1972年,Liecht等人成功地制
Microwave transistors, silicon bipolar transistors, are now beginning to be widely used to make various amplifiers, such as low noise and power at 4 GHz. Since transistor amplifiers have many excellent properties compared to amplifiers of other structures, it is expected to develop transistors with low noise, high gain and high output power at higher frequencies. However, the characteristics of silicon bipolar transistors have now been approximately at their limits, and GaAs Schottky barrier field-effect transistors (GaAsSBEETs or GaAsMESFETs) have drawn much attention in recent years as their replacement. GaAsFETs have been proposed by Mead (1966), and Hooper (1967) et al. Have determined their potential as microwave transistors by the time Drangeid (1970) et al. Tried a device with a maximum oscillation frequency of 30 gigahertz for the device As the microwave transistor trial period. By 1972, Liecht et al