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应用中频反应磁控溅射技术制备了Al2O3:Ce3+的非晶薄膜.X射线光电子谱(XPS)检测显示薄膜中有Ce3+生成.这些薄膜的光致发光峰是在374 nm附近,它来自于Ce3+离子的5d1激发态向基态4f1的两个劈裂能级的跃迁.发光强度强烈地依赖于薄膜的掺杂浓度,但发光峰位置不随掺杂浓度而变化.Ce3+含量和薄膜的化学成分是通过X射线散射能谱(EDS)测量的.薄膜试样的晶体结构应用X射线衍射分析.俄歇电子谱用于对薄膜材料的化学组分进行定性分析.发射蓝紫色光的Al2O3:Ce3+非晶薄膜在平板显示等领域有着广泛的潜在应用前景.
An amorphous film of Al2O3: Ce3 + was prepared by MF reactive magnetron sputtering. X-ray photoelectron spectroscopy (XPS) showed that there was Ce3 + in the film.The photoluminescence peak of these films was around 374 nm, which was from Ce3 + Ion 5d1 excited state to the ground state 4f1 split two splitting levels.Light intensity depends strongly on the film doping concentration, but the emission peak position does not change with the doping concentration.Ce3 + content and the chemical composition of the film is through X-ray diffraction (EDS). The crystalline structure of the thin film samples was analyzed by X-ray diffraction. Auger electron spectroscopy was used to qualitatively analyze the chemical composition of the thin film material. Al2O3: Ce3 + Thin-film display in the field of flat-panel display has a wide range of potential applications.